ECE 3456 exam questions with answers and rationales 2026 for university of
Houston spring final exam
ECE 3456 - Analog Electronics
University of Houston Spring 2026 Final Exam Questions
200 Questions with Answers and Rationales
How to Use This Document
This comprehensive question bank is designed to prepare you for the ECE 3456
(Analog Electronics) Final Exam at the University of Houston. The course covers
BJT, MOS, and JFET transistors; multistage amplifier design; frequency response;
feedback concepts; and operational amplifiers . Each question includes a detailed
rationale to help you understand the underlying principles—critical for the
analytical nature of this exam.
Exam Blueprint (Based on Course Syllabus)
Topic Area Approx. Weight Questions
BJT Biasing & DC Analysis 10-15% Q1-20
MOSFET Biasing & DC Analysis 10-15% Q21-40
,JFET Characteristics 5-10%Q41-50
Small-Signal Analysis (BJT & FET) 15-20% Q51-80
Multistage Amplifiers (Cascade, Cascode, Darlington) 10-15% Q81-100
Frequency Response (Bode Plots, Poles/Zeros) 10-15% Q101-130
Feedback Amplifiers (Topologies, Stability) 10-15% Q131-155
Operational Amplifiers (Ideal Op-Amp, Applications) 10-15% Q156-180
Advanced Topics & Mixed Analysis 5-10% Q181-200
SECTION I: BJT BIASING & DC ANALYSIS (Questions 1-20)
Question 1
For an NPN BJT in the active region, which relationship is correct?
A) IE = IB + IC
B) IE = IB × IC
C) IE = IC - IB
D) IE = IC / IB
,Answer: A) IE = IB + IC
Rationale: Kirchhoff's Current Law applied to the transistor terminals: the emitter
current (IE) is the sum of the base current (IB) and collector current (IC). This is
fundamental to BJT operation, with IC ≈ IE in active mode since β is typically large
(β = IC/IB ≈ 100-300).
Question 2
What is the typical voltage drop (VBE) for a silicon BJT in the active region?
A) 0.3 V
B) 0.7 V
C) 1.2 V
D) 5.0 V
Answer: B) 0.7 V
, Rationale: For a silicon BJT, the base-emitter junction is forward-biased in the
active region with a typical voltage drop of approximately 0.6-0.7 V. Germanium
transistors have VBE ≈ 0.3 V. This "diode drop" is a key assumption in DC biasing
calculations.
Question 3
In a fixed-bias configuration, the Q-point is primarily determined by:
A) The collector resistor only
B) The base resistor only
C) Both base and collector resistors
D) The power supply voltage only
Answer: C) Both base and collector resistors
Houston spring final exam
ECE 3456 - Analog Electronics
University of Houston Spring 2026 Final Exam Questions
200 Questions with Answers and Rationales
How to Use This Document
This comprehensive question bank is designed to prepare you for the ECE 3456
(Analog Electronics) Final Exam at the University of Houston. The course covers
BJT, MOS, and JFET transistors; multistage amplifier design; frequency response;
feedback concepts; and operational amplifiers . Each question includes a detailed
rationale to help you understand the underlying principles—critical for the
analytical nature of this exam.
Exam Blueprint (Based on Course Syllabus)
Topic Area Approx. Weight Questions
BJT Biasing & DC Analysis 10-15% Q1-20
MOSFET Biasing & DC Analysis 10-15% Q21-40
,JFET Characteristics 5-10%Q41-50
Small-Signal Analysis (BJT & FET) 15-20% Q51-80
Multistage Amplifiers (Cascade, Cascode, Darlington) 10-15% Q81-100
Frequency Response (Bode Plots, Poles/Zeros) 10-15% Q101-130
Feedback Amplifiers (Topologies, Stability) 10-15% Q131-155
Operational Amplifiers (Ideal Op-Amp, Applications) 10-15% Q156-180
Advanced Topics & Mixed Analysis 5-10% Q181-200
SECTION I: BJT BIASING & DC ANALYSIS (Questions 1-20)
Question 1
For an NPN BJT in the active region, which relationship is correct?
A) IE = IB + IC
B) IE = IB × IC
C) IE = IC - IB
D) IE = IC / IB
,Answer: A) IE = IB + IC
Rationale: Kirchhoff's Current Law applied to the transistor terminals: the emitter
current (IE) is the sum of the base current (IB) and collector current (IC). This is
fundamental to BJT operation, with IC ≈ IE in active mode since β is typically large
(β = IC/IB ≈ 100-300).
Question 2
What is the typical voltage drop (VBE) for a silicon BJT in the active region?
A) 0.3 V
B) 0.7 V
C) 1.2 V
D) 5.0 V
Answer: B) 0.7 V
, Rationale: For a silicon BJT, the base-emitter junction is forward-biased in the
active region with a typical voltage drop of approximately 0.6-0.7 V. Germanium
transistors have VBE ≈ 0.3 V. This "diode drop" is a key assumption in DC biasing
calculations.
Question 3
In a fixed-bias configuration, the Q-point is primarily determined by:
A) The collector resistor only
B) The base resistor only
C) Both base and collector resistors
D) The power supply voltage only
Answer: C) Both base and collector resistors
