Negative resistivity tunnel resistor:
I have doubts and ideas about the article published in Nature in 2004 about
negative resistivity in domain wall.here is the
link:http://nano.caltech.edu/publications/papers/hong_nature2004.pdf
In this article,a (Ga,Mn)As material is used to study the properties of domain
wall,by magnetizing this material along the hard axis.so that the magnetic
properties will not dominate the study of resistivity of this domain walls,for
eg:Magnetoresistance. the given is
1.I am gonna make one modification.since each time for setting up the domain
wall,we have to apply magnetic field pulses to this in the y-direction.For that ,we
can introduce a material which is both antiferromagnet and insulator to pin its
magnetization.So,once get magnetized ,no need for furthur applied field,the
domain wall is always there.
I have doubts and ideas about the article published in Nature in 2004 about
negative resistivity in domain wall.here is the
link:http://nano.caltech.edu/publications/papers/hong_nature2004.pdf
In this article,a (Ga,Mn)As material is used to study the properties of domain
wall,by magnetizing this material along the hard axis.so that the magnetic
properties will not dominate the study of resistivity of this domain walls,for
eg:Magnetoresistance. the given is
1.I am gonna make one modification.since each time for setting up the domain
wall,we have to apply magnetic field pulses to this in the y-direction.For that ,we
can introduce a material which is both antiferromagnet and insulator to pin its
magnetization.So,once get magnetized ,no need for furthur applied field,the
domain wall is always there.
