SiO2 CHANNEL RECTIFIER FOR
ELECTROSTATIC DISCHARGE PROTECTION IN NANOSCALE
CMOS CHIP
C.Deepalakshmi,M.E. VLSI
Abstract
A new SiO2 Channel rectifier is The fowler-nordheim tunneling is given
designed and its characteristics are studied by the following figure. Here the electrons
using transport equations and simulated tunnel through the oxide to reach the
using Matlab. In the existing Electrostatic source, drain and the substrate. Thus,
rectifier the channel between source and
SiO2 acts as tunneling channel in both
drain is made of semiconductor material.
While studying its characteristics, it is hot-electron injection and fowler
proved that even for small negative nordheim tunneling[1]
voltage, few magnitude of output current
exists. So, a current flows in the negative
direction. But when nanoscale rectifier is
designed using SiO2 as channel, complete
rectifier property is achieved.
Keywords : SiO2 FG Cell,
Nanoscale rectifier, ESD Protection
I. INTRODUCTION
In order to know more about SiO2,
Fig.2 Fowler Nordheim Tunneling
then the functioning of floating gate
mosfets can be reviewed. The two II. PHYSICAL PROPERTIES OF SiO2
physical effects that normally occur in as CHANNEL
floating gate memory cells are hot-
electron injection and fowler-nordheim Classicaly, SiO2 has no available states
tunneling. In these two effects, the SiO2 in for conduction. However, according to
floating gate acts as both conductor and Quantum physics, it has some few states
insulator[1] available for tunneling[2]. Furthermore,
the applied voltage between the source
and the SiO2 gate will lower the density
of states with respect to the Fermi level
and thus there will be more available
states for tunneling. When there is source
and drain with SiO2 as channel with no
applied voltage, the whole device will be
in equilibrium and there will be no
tunneling. The following figure represents
the position of Fermi level in source and
Fig.1. Hot Electron injection through sio2 drain and the distribution of density of
states in the silicondioxide channel with
ELECTROSTATIC DISCHARGE PROTECTION IN NANOSCALE
CMOS CHIP
C.Deepalakshmi,M.E. VLSI
Abstract
A new SiO2 Channel rectifier is The fowler-nordheim tunneling is given
designed and its characteristics are studied by the following figure. Here the electrons
using transport equations and simulated tunnel through the oxide to reach the
using Matlab. In the existing Electrostatic source, drain and the substrate. Thus,
rectifier the channel between source and
SiO2 acts as tunneling channel in both
drain is made of semiconductor material.
While studying its characteristics, it is hot-electron injection and fowler
proved that even for small negative nordheim tunneling[1]
voltage, few magnitude of output current
exists. So, a current flows in the negative
direction. But when nanoscale rectifier is
designed using SiO2 as channel, complete
rectifier property is achieved.
Keywords : SiO2 FG Cell,
Nanoscale rectifier, ESD Protection
I. INTRODUCTION
In order to know more about SiO2,
Fig.2 Fowler Nordheim Tunneling
then the functioning of floating gate
mosfets can be reviewed. The two II. PHYSICAL PROPERTIES OF SiO2
physical effects that normally occur in as CHANNEL
floating gate memory cells are hot-
electron injection and fowler-nordheim Classicaly, SiO2 has no available states
tunneling. In these two effects, the SiO2 in for conduction. However, according to
floating gate acts as both conductor and Quantum physics, it has some few states
insulator[1] available for tunneling[2]. Furthermore,
the applied voltage between the source
and the SiO2 gate will lower the density
of states with respect to the Fermi level
and thus there will be more available
states for tunneling. When there is source
and drain with SiO2 as channel with no
applied voltage, the whole device will be
in equilibrium and there will be no
tunneling. The following figure represents
the position of Fermi level in source and
Fig.1. Hot Electron injection through sio2 drain and the distribution of density of
states in the silicondioxide channel with
