SiO2 CHANNEL RECTIFIER FOR
ELECTROSTATIC DISCHARGE PROTECTION IN NANOSCALE
CMOS CHIP
C.Deepalakshmi,M.E. VLSI
Abstract
A new SiO2 Channel rectifier is The fowler-nordheim tunneling is given
designed and its characteristics are studied by the following figure.Here the electrons
using transport equations and simulated tunnel through the oxide to reach the
using Matlab. In the existing Electrostatic source,drain and the substrate.Thus,SiO2
rectifier the channel between source and acts as tunneling channel in both hot-
drain is made of semiconductor material.
electron injection and fowler nordheim
While studying its characteristics, it is
proved that even for small negative tunneling[1]
voltage, few magnitude of output current
exists. So, a current flows in the negative
direction. But when nanoscale rectifier is
designed using SiO2 as channel, complete
rectifier property is achieved.
Keywords : SiO2 FG Cell,
Nanoscale rectifier, ESD Protection
I. INTRODUCTION
In order to know more about
Fig.2 Fowler Nordheim Tunneling
SiO2,then the functioning of floating gate
mosfets can be reviewed.The two physical II. PHYSICAL PROPERTIES OF SiO2
effects that normally occur in floating gate as CHANNEL
memory cells are hot-electron injection
and fowler-nordheim tunneling. In these Classicaly,SiO2 has no available states
two effects,the SiO2 in floating gate acts for conduction.However,according to
Quantum physics,it has some few states
as both conductor and insulator[1]
available for tunneling[2].
Furthermore,the applied voltage between
the source and the SiO2 gate will lower
the density of states withrespect to the
Fermi level and thus there will be more
available states for tunneling.When there
is source and drain with SiO2 as channel
with no applied voltage,the whole device
will be in equilibrium and there will be no
tunneling.The following figure represents
Fig.1. Hot Electron injection through sio2 the position of Fermi level in source and
drain and the distribution of density of
states in the silicondioxide channel with
ELECTROSTATIC DISCHARGE PROTECTION IN NANOSCALE
CMOS CHIP
C.Deepalakshmi,M.E. VLSI
Abstract
A new SiO2 Channel rectifier is The fowler-nordheim tunneling is given
designed and its characteristics are studied by the following figure.Here the electrons
using transport equations and simulated tunnel through the oxide to reach the
using Matlab. In the existing Electrostatic source,drain and the substrate.Thus,SiO2
rectifier the channel between source and acts as tunneling channel in both hot-
drain is made of semiconductor material.
electron injection and fowler nordheim
While studying its characteristics, it is
proved that even for small negative tunneling[1]
voltage, few magnitude of output current
exists. So, a current flows in the negative
direction. But when nanoscale rectifier is
designed using SiO2 as channel, complete
rectifier property is achieved.
Keywords : SiO2 FG Cell,
Nanoscale rectifier, ESD Protection
I. INTRODUCTION
In order to know more about
Fig.2 Fowler Nordheim Tunneling
SiO2,then the functioning of floating gate
mosfets can be reviewed.The two physical II. PHYSICAL PROPERTIES OF SiO2
effects that normally occur in floating gate as CHANNEL
memory cells are hot-electron injection
and fowler-nordheim tunneling. In these Classicaly,SiO2 has no available states
two effects,the SiO2 in floating gate acts for conduction.However,according to
Quantum physics,it has some few states
as both conductor and insulator[1]
available for tunneling[2].
Furthermore,the applied voltage between
the source and the SiO2 gate will lower
the density of states withrespect to the
Fermi level and thus there will be more
available states for tunneling.When there
is source and drain with SiO2 as channel
with no applied voltage,the whole device
will be in equilibrium and there will be no
tunneling.The following figure represents
Fig.1. Hot Electron injection through sio2 the position of Fermi level in source and
drain and the distribution of density of
states in the silicondioxide channel with
