SOLID STATE DEVICES
301. Which of the following is considered a unipolar device?
A. Capacitor
B. Inductor
C. FET
D. BJT
302. Who invented the feedback amplifier in 1928?
A. Henry Brattain
B. Mark Twain
C. Harold Black
D. Bell Labs
303. The arrow in semiconductor symbol
A. Always points towards the P region and away from the N region
B. Always points towards the N region and away from the P region
C. Is not a significant symbol
D. Always points toward the PN junction
,SOLID STATE DEVICES
304. If the input power of a half wave rectifier has a frequency of 400 Hertz, then the
ripple frequency will be equal to .
A. 800 Hertz
B. 200 Hertz
C. 100 Hertz
D. 400 Hertz
305. If the input frequency of a full-wave rectifier is 400 Hertz, the ripple frequency will
be .
A. Twice as great as the input frequency
B. Equal to the input frequency divided by two
C. Quadruple of the input frequency
D. Equal to a quarter of its input frequency
306. What is also called as the conventional amplifier?
A. Common-collector circuit
B. Emitter follower circuit
C. Common base circuit
D. Common emitter circuit
307. Which of the following is true about the emitter follower circuits?
A. The output signal is 180º out of phase with the input signal
B. The output signal is in phase with the input signal
C. The input signal is always equal to the output signal
D. An emitter follower circuit is equivalent to a common emitter connection
308. The equation for JFET's transconductance.
A. gm = ΔIc/ΔVGS
B. gm = IG/VG
C. gm = VGS/Ic
D. gm = Ic/VDS
,SOLID STATE DEVICES
309. another name for a light activated diode (LAD) is
A. IR emitter
B. LED
C. Photodiode
D. LCD
, SOLID STATE DEVICES
310. The semiconductor device that radiate light or utilize light are called
A. Active devices
B. Photoelectric devices
C. Optoelectronic devices
D. Passive devices
311. Structural category of a semiconductor diodes can be either
A. Electrolytic and point contact
B. Junction and point contact
C. Electrolytic and vacuum
D. Vacuum and gaseous
312. Zener diodes can be primarily classified as
A. Forward and reverse biased
B. Varactor and rectifying
C. Voltage regulation and voltage reference
D. Gaseous and hot-carrier
313. The principal characteristics of a tunnel diode.
A. A constant current under conditions of varying voltage
B. A negative resistance region
C. A very high PIV device
D. An internal capacitance that varies with the applied voltage
314. A special type of semiconductor diode which varies its internal capacitance as the
voltage applied to its terminal varies.
A. Varactor diode
B. Point contact diode
C. Zener diode
D. Silicon controlled rectifier
315. The maximum forward current in a junction diode is limited by its
301. Which of the following is considered a unipolar device?
A. Capacitor
B. Inductor
C. FET
D. BJT
302. Who invented the feedback amplifier in 1928?
A. Henry Brattain
B. Mark Twain
C. Harold Black
D. Bell Labs
303. The arrow in semiconductor symbol
A. Always points towards the P region and away from the N region
B. Always points towards the N region and away from the P region
C. Is not a significant symbol
D. Always points toward the PN junction
,SOLID STATE DEVICES
304. If the input power of a half wave rectifier has a frequency of 400 Hertz, then the
ripple frequency will be equal to .
A. 800 Hertz
B. 200 Hertz
C. 100 Hertz
D. 400 Hertz
305. If the input frequency of a full-wave rectifier is 400 Hertz, the ripple frequency will
be .
A. Twice as great as the input frequency
B. Equal to the input frequency divided by two
C. Quadruple of the input frequency
D. Equal to a quarter of its input frequency
306. What is also called as the conventional amplifier?
A. Common-collector circuit
B. Emitter follower circuit
C. Common base circuit
D. Common emitter circuit
307. Which of the following is true about the emitter follower circuits?
A. The output signal is 180º out of phase with the input signal
B. The output signal is in phase with the input signal
C. The input signal is always equal to the output signal
D. An emitter follower circuit is equivalent to a common emitter connection
308. The equation for JFET's transconductance.
A. gm = ΔIc/ΔVGS
B. gm = IG/VG
C. gm = VGS/Ic
D. gm = Ic/VDS
,SOLID STATE DEVICES
309. another name for a light activated diode (LAD) is
A. IR emitter
B. LED
C. Photodiode
D. LCD
, SOLID STATE DEVICES
310. The semiconductor device that radiate light or utilize light are called
A. Active devices
B. Photoelectric devices
C. Optoelectronic devices
D. Passive devices
311. Structural category of a semiconductor diodes can be either
A. Electrolytic and point contact
B. Junction and point contact
C. Electrolytic and vacuum
D. Vacuum and gaseous
312. Zener diodes can be primarily classified as
A. Forward and reverse biased
B. Varactor and rectifying
C. Voltage regulation and voltage reference
D. Gaseous and hot-carrier
313. The principal characteristics of a tunnel diode.
A. A constant current under conditions of varying voltage
B. A negative resistance region
C. A very high PIV device
D. An internal capacitance that varies with the applied voltage
314. A special type of semiconductor diode which varies its internal capacitance as the
voltage applied to its terminal varies.
A. Varactor diode
B. Point contact diode
C. Zener diode
D. Silicon controlled rectifier
315. The maximum forward current in a junction diode is limited by its
