What is a Power Transistor?
The three-terminal device which is designed specifically to control high current – voltage
rating.
The classification of power transistor
1. Bipolar junction transistor (BJTs)
2. Metal oxide semiconductor field-effect transistor (MOSFETs)
3. Static induction transistor (SITs)
4. Insulated-gate bipolar transistor (IGBTs).
Bipolar Junction Transistor
A BJT is a bipolar junction transistor, which is capable of handling two polarities (holes and
electrons), it can be used as a switch or as an amplifier and also known as a current control device.
The following are the characteristics of a Power BJT, they are
1. It has a larger size, so that maximum current can flow through it
2. The breakdown voltage is high
3. It has higher current carrying and high-power handling capability
4. It has a higher on-state voltage drop
5. It can be used in high power application.
Construction
The bipolar junction transistor (BJT) is consists of three semiconductor regions base, collector,
and emitter that are doped differently.
The base region is lightly doped and is very thin compared to the collector and emitter regions.
The collector region is moderately doped while the emitter region is heavily doped.
, Bipolar junction transistors can be an NPN or a PNP type.
The NPN type consists of two N regions separated by a P region. The base region is the P-type
material while the collector and emitter regions are N-type materials.
In PNP type, the transistor consists of two P-type regions, the collector and emitter, separated
by an N-type base region.
The three-terminal device which is designed specifically to control high current – voltage
rating.
The classification of power transistor
1. Bipolar junction transistor (BJTs)
2. Metal oxide semiconductor field-effect transistor (MOSFETs)
3. Static induction transistor (SITs)
4. Insulated-gate bipolar transistor (IGBTs).
Bipolar Junction Transistor
A BJT is a bipolar junction transistor, which is capable of handling two polarities (holes and
electrons), it can be used as a switch or as an amplifier and also known as a current control device.
The following are the characteristics of a Power BJT, they are
1. It has a larger size, so that maximum current can flow through it
2. The breakdown voltage is high
3. It has higher current carrying and high-power handling capability
4. It has a higher on-state voltage drop
5. It can be used in high power application.
Construction
The bipolar junction transistor (BJT) is consists of three semiconductor regions base, collector,
and emitter that are doped differently.
The base region is lightly doped and is very thin compared to the collector and emitter regions.
The collector region is moderately doped while the emitter region is heavily doped.
, Bipolar junction transistors can be an NPN or a PNP type.
The NPN type consists of two N regions separated by a P region. The base region is the P-type
material while the collector and emitter regions are N-type materials.
In PNP type, the transistor consists of two P-type regions, the collector and emitter, separated
by an N-type base region.
