DEPARTMENT: H & AS.
SEMESTER: 1/2
SUBJECT: PHYSICS
SUBJECT CODE: 3110018
FACULTY: DR. SONAL MATHUR
IMPORTANT QUESTIONS
CH.1 ELECTRONIC MATERIALS
1. Give assumptions of classical free electron theory
2. Explain the dependence of Fermi level on temperature.
3. Give the difference between Direct and Indirect band gap.
4. Write a note on energy band diagram and formation of energy bands.
5. Explain fermi levels.
6. Explain classification of materials as conductors, insulators and semiconductors.
7. Explain Kronig Penney model in detail.
8. Explain direct and indirect band gap with E-k diagrams.
9. Give success and drawback of classical free electron theory.
10. Write short notes on E-K diagram.
11. Derive the mathematical expression for density of states.
12. What is meant by effective mass of an electron? Derive an expression for the effective
mass of an electron.
CH.2 SEMICONDUCTORS
1. Give difference between N type and P type semiconductors.
2. Explain drift and diffusion current.
3. Explain diffusion mechanism in detail
4. Derive expression of electron concentration in conduction band.
5. Explain intrinsic and extrinsic semiconductors with necessary diagram.
6. What is PN junction diode? What is external bias? Describe its forward and reverse bias
conditions with appropriate diagram.
7. Derive equations for n-type semiconductor to determine dependence of fermi level on
temperature and doping concentration.
8. Write a note on metal semiconductor junctions.
9. Consider two-dimensional square lattice of side 3.0 Å. At what electron momentum
values do the sides of first Brillouin zone appear? What is the energy of free electron with
this momentum?
10. Consider n-type silicon semiconductor with a length of 100 μm, cross sectional area 10-7
cm2 , minority charge carrier life time 10-6 s, μe is 0.13 m2 / Vs and μh is 0.05 m2 / Vs.
Amiraj College of Engineering & Technology
SEMESTER: 1/2
SUBJECT: PHYSICS
SUBJECT CODE: 3110018
FACULTY: DR. SONAL MATHUR
IMPORTANT QUESTIONS
CH.1 ELECTRONIC MATERIALS
1. Give assumptions of classical free electron theory
2. Explain the dependence of Fermi level on temperature.
3. Give the difference between Direct and Indirect band gap.
4. Write a note on energy band diagram and formation of energy bands.
5. Explain fermi levels.
6. Explain classification of materials as conductors, insulators and semiconductors.
7. Explain Kronig Penney model in detail.
8. Explain direct and indirect band gap with E-k diagrams.
9. Give success and drawback of classical free electron theory.
10. Write short notes on E-K diagram.
11. Derive the mathematical expression for density of states.
12. What is meant by effective mass of an electron? Derive an expression for the effective
mass of an electron.
CH.2 SEMICONDUCTORS
1. Give difference between N type and P type semiconductors.
2. Explain drift and diffusion current.
3. Explain diffusion mechanism in detail
4. Derive expression of electron concentration in conduction band.
5. Explain intrinsic and extrinsic semiconductors with necessary diagram.
6. What is PN junction diode? What is external bias? Describe its forward and reverse bias
conditions with appropriate diagram.
7. Derive equations for n-type semiconductor to determine dependence of fermi level on
temperature and doping concentration.
8. Write a note on metal semiconductor junctions.
9. Consider two-dimensional square lattice of side 3.0 Å. At what electron momentum
values do the sides of first Brillouin zone appear? What is the energy of free electron with
this momentum?
10. Consider n-type silicon semiconductor with a length of 100 μm, cross sectional area 10-7
cm2 , minority charge carrier life time 10-6 s, μe is 0.13 m2 / Vs and μh is 0.05 m2 / Vs.
Amiraj College of Engineering & Technology
