Unitg-1 ICgTechnologies,gMOSg&gBigCMOSgCircuits
UNIT-I
IC Technologies
g
• Introduction Basicg Electricalg Propertiesg ofg
MOSgandgBiCMOSgCircuits
• MOS • IDSg-gVDSgrelationships
• PMOS • MOSgtransistorgThresholdg
Voltageg-
• NMOS gVTgfiguregofgmerit-ω0
• Transconductance-gm,ggds;
• CMOS
• Passgtransistor
&
• NMOSgInverter,gVariousgp
• BiCMOS ullgups,gCMOSgInvertergan
Technologies alysisgandgdesign
• Bi-CMOS Inverters
g
, Unitg-1 ICgTechnologies,gMOSg&gBigCMOSgCircuits
INTRODUCTION TO IC TECHNOLOGY
g g g
Thegdevelopmentgofgelectronicsgendlessgwithginventiongofgvaccumgtubesgandgassociatedgelectron
icgcircuits.gThisgactivitygtermedgasgvaccumgtubegelectronics,gafterwardgthegevolutiongofgsolidgstategdevic
esgandgconsequentgdevelopmentgofgintegratedgcircuitsgaregresponsiblegforgthegpresentgstatusgofgcommuni
cation,gcomputinggandginstrumentation.
• ThegfirstgvaccumgtubegdiodegwasginventedgbygjohngambrasegFlemingging1904.
• Thegvaccumgtriodegwasginventedgbygleegdegforestging1906.
Earlyg developmentsgofgtheg IntegratedgCircuitg(IC)ggog backg tog 1949.g Germang engineergWerner
gJacobigfiledgagpatentgforgangICglikeg semiconductorg amplifyingg deviceg showingg fivegtransistorsg ong
ag commong substrateg ing ag 2-
stagegamplifiergarrangement.gJacobigdisclosedgsmallgcheapgofghearinggaids.
Integratedgcircuitsgweregmadegpossiblegbygexperimentalgdiscoveriesgwhichgshowedgthatgsemicon
ductorgdevicesgcouldgperformgthegfunctionsgofgvacuumgtubesgandgbygmid-20th-
centurygtechnologygadvancementsgingsemiconductorgdevicegfabrication.
Thegintegrationgofglargegnumbersgofgtinygtransistorsgintogagsmallgchipgwasgangenormousgimprove
mentgovergthegmanualgassemblygofgcircuitsgusinggelectronicgcomponents.
Thegintegratedgcircuitsgmassgproductiongcapability,greliability,gandgbuilding-
blockgapproachgtogcircuitgdesigngensuredgthegrapidgadoptiongofgstandardizedgICsgingplacegofgdesignsgusin
ggdiscretegtransistors.
Angintegratedgcircuitg(IC)gisgagsmallgsemiconductor-
basedgelectronicgdevicegconsistinggofgfabricatedgtransistors,gresistorsgandgcapacitors.gIntegratedgc
ircuitsgaregthegbuildinggblocksgofgmostgelectronicgdevicesgandgequipment.gAngintegratedgcircuitgisg
alsogknowngasgagchipgorgmicrochip.
TheregaregtwogmaingadvantagesgofgICsgovergdiscretegcircuits:gcostgandgperformance.gCostgisg lowg
becausegthegchips,gwithgallgtheirgcomponents,garegprintedgasgagunitgbygphotolithographygratherg thangbein
ggconstructedgonegtransistorgatgagtime.gFurthermore,gmuchglessgmaterialgisgusedgtogconstructgagpackagedgI
Cgdiegthangagdiscretegcircuit.gPerformancegisghighgsincegthegcomponentsgswitchgquicklygandgconsumeglitt
legpowerg(comparedgtogtheirgdiscretegcounterparts)gbecausegthegcomponentsgaregsmallgandgpositionedgcl
osegtogether.gAsgofg2006,gchipgareasgrangegfromgagfewgsquaregmillimetersgtogaroundg350gmm2,gwithgupgt
og1gmilliongtransistorsgpergmm
, Unitg-1 ICgTechnologies,gMOSg&gBigCMOSgCircuits
IC Invention:
g
Inventor Year Circuit Remark
Fleming 1904 Vacuumgtubegdiode largegexpensive,gpower-
ghungry,gunreliable
1906 Vacuumgtriode
WilliamgShockleyg( 1945 Semiconductorgreplacing --
Bellglabs) gvacuumgtube
BardeengandgBratta 1947 PointgContactgtransferg Drivinggfactorgofggrowthgofgt
ingandgShockleyg(Be hegVLSIgtechnology
llglabs) resistancegdeviceg“BJT”
WernergJacobi 1949 1stgICg containinggamplifyingg Nogcommercialgusegreported
g(SiemensgAG) Deviceg2stagegamplifier
Shockley 1951 JunctiongTransistor “Practicalgformgof
transistor”
JackgKilby Julyg1958 IntegratedgCircuitsgF/FgWit FathergofgICgdesign
hg 2-
(TexasgInstr TgGermaniumgslicegandggol
uments) dgwires
NoycegFairchild Dec.g1958 IntegratedgCircuitsgSilicon “ThegMayorgofgSilicong
gSemiconductor Valley”
KahnggBellgLab 1960 FirstgMOSFET Startgofgnewgeragforgse
miconductorgindustry
FairchildgSemi 1061 FirstgCommercial
conductorgAnd
gTexas IC
FrankgWanlass 1963 CMOS
(FairchildgSemicon
ductor)
FedericogFaggin 1968 SiliconggategICgtechnology LatergJoinedgIntelgtogleadgfir
stgCPUgIntelg4004ging1970
2
(FairchildgSemicon 2300gTgong9mm
ductor)
ZarlinkgSemi Recently M2Agcapsuleg forgend takeg photographsgofg
conductors oscopy digestivegtractg 2/sec.
, Unitg-1 ICgTechnologies,gMOSg&gBigCMOSgCircuits
Moore’sgLaw:
• GordongE.gMooreg-gChairmangEmeritusgofgIntelgCorporation
• 1965g-gobservedgtrendsgingindustryg-gofgtransistorsgongICsgvsg releasegdates
• NoticedgnumbergofgtransistorsgdoublinggwithgreleasegofgeachgnewgICggeneration
• Releasegdatesg(separateggenerations)gweregallg18-24gmonthsgapart
“Thegnumbergofgtransistorsgongangintegratedgcircuitgwillgdoublegeveryg18gmonths”
Theg levelg ofg integrationg ofg silicong technologyg asg measuredg ing termsg ofg numberg ofg devicesg perg ICgSemi
conductorgindustryghasgfollowedgthisgpredictiongwithgsurprisinggaccuracy.
IC Technology:
g
• Speedg/gPowergperformancegofgavailablegtechnologies
• Thegmicroelectronicsgevolution
• SIAgRoadmap
• SemiconductorgManufacturersg2001gRanking
Circuit Technology
g
IC Technology
g
Bipolar CMOS BiCMOS SOI SiGe GaAs
Category BJT CMOS
Lower
PowergDi
PowergDissipatio Moderategt less
ssipation
n ogHigh
Speed Faster Fast Appr. High
Equalgrise packingg
Gm 4ms 0.4ms gandgfallgti Why density
me CMOS
Switchgimplement poor Good
ation ?
Techngology slower Faster Fully
restoredglo
Scaleg down
improvement moregeasily
gicglevels
UNIT-I
IC Technologies
g
• Introduction Basicg Electricalg Propertiesg ofg
MOSgandgBiCMOSgCircuits
• MOS • IDSg-gVDSgrelationships
• PMOS • MOSgtransistorgThresholdg
Voltageg-
• NMOS gVTgfiguregofgmerit-ω0
• Transconductance-gm,ggds;
• CMOS
• Passgtransistor
&
• NMOSgInverter,gVariousgp
• BiCMOS ullgups,gCMOSgInvertergan
Technologies alysisgandgdesign
• Bi-CMOS Inverters
g
, Unitg-1 ICgTechnologies,gMOSg&gBigCMOSgCircuits
INTRODUCTION TO IC TECHNOLOGY
g g g
Thegdevelopmentgofgelectronicsgendlessgwithginventiongofgvaccumgtubesgandgassociatedgelectron
icgcircuits.gThisgactivitygtermedgasgvaccumgtubegelectronics,gafterwardgthegevolutiongofgsolidgstategdevic
esgandgconsequentgdevelopmentgofgintegratedgcircuitsgaregresponsiblegforgthegpresentgstatusgofgcommuni
cation,gcomputinggandginstrumentation.
• ThegfirstgvaccumgtubegdiodegwasginventedgbygjohngambrasegFlemingging1904.
• Thegvaccumgtriodegwasginventedgbygleegdegforestging1906.
Earlyg developmentsgofgtheg IntegratedgCircuitg(IC)ggog backg tog 1949.g Germang engineergWerner
gJacobigfiledgagpatentgforgangICglikeg semiconductorg amplifyingg deviceg showingg fivegtransistorsg ong
ag commong substrateg ing ag 2-
stagegamplifiergarrangement.gJacobigdisclosedgsmallgcheapgofghearinggaids.
Integratedgcircuitsgweregmadegpossiblegbygexperimentalgdiscoveriesgwhichgshowedgthatgsemicon
ductorgdevicesgcouldgperformgthegfunctionsgofgvacuumgtubesgandgbygmid-20th-
centurygtechnologygadvancementsgingsemiconductorgdevicegfabrication.
Thegintegrationgofglargegnumbersgofgtinygtransistorsgintogagsmallgchipgwasgangenormousgimprove
mentgovergthegmanualgassemblygofgcircuitsgusinggelectronicgcomponents.
Thegintegratedgcircuitsgmassgproductiongcapability,greliability,gandgbuilding-
blockgapproachgtogcircuitgdesigngensuredgthegrapidgadoptiongofgstandardizedgICsgingplacegofgdesignsgusin
ggdiscretegtransistors.
Angintegratedgcircuitg(IC)gisgagsmallgsemiconductor-
basedgelectronicgdevicegconsistinggofgfabricatedgtransistors,gresistorsgandgcapacitors.gIntegratedgc
ircuitsgaregthegbuildinggblocksgofgmostgelectronicgdevicesgandgequipment.gAngintegratedgcircuitgisg
alsogknowngasgagchipgorgmicrochip.
TheregaregtwogmaingadvantagesgofgICsgovergdiscretegcircuits:gcostgandgperformance.gCostgisg lowg
becausegthegchips,gwithgallgtheirgcomponents,garegprintedgasgagunitgbygphotolithographygratherg thangbein
ggconstructedgonegtransistorgatgagtime.gFurthermore,gmuchglessgmaterialgisgusedgtogconstructgagpackagedgI
Cgdiegthangagdiscretegcircuit.gPerformancegisghighgsincegthegcomponentsgswitchgquicklygandgconsumeglitt
legpowerg(comparedgtogtheirgdiscretegcounterparts)gbecausegthegcomponentsgaregsmallgandgpositionedgcl
osegtogether.gAsgofg2006,gchipgareasgrangegfromgagfewgsquaregmillimetersgtogaroundg350gmm2,gwithgupgt
og1gmilliongtransistorsgpergmm
, Unitg-1 ICgTechnologies,gMOSg&gBigCMOSgCircuits
IC Invention:
g
Inventor Year Circuit Remark
Fleming 1904 Vacuumgtubegdiode largegexpensive,gpower-
ghungry,gunreliable
1906 Vacuumgtriode
WilliamgShockleyg( 1945 Semiconductorgreplacing --
Bellglabs) gvacuumgtube
BardeengandgBratta 1947 PointgContactgtransferg Drivinggfactorgofggrowthgofgt
ingandgShockleyg(Be hegVLSIgtechnology
llglabs) resistancegdeviceg“BJT”
WernergJacobi 1949 1stgICg containinggamplifyingg Nogcommercialgusegreported
g(SiemensgAG) Deviceg2stagegamplifier
Shockley 1951 JunctiongTransistor “Practicalgformgof
transistor”
JackgKilby Julyg1958 IntegratedgCircuitsgF/FgWit FathergofgICgdesign
hg 2-
(TexasgInstr TgGermaniumgslicegandggol
uments) dgwires
NoycegFairchild Dec.g1958 IntegratedgCircuitsgSilicon “ThegMayorgofgSilicong
gSemiconductor Valley”
KahnggBellgLab 1960 FirstgMOSFET Startgofgnewgeragforgse
miconductorgindustry
FairchildgSemi 1061 FirstgCommercial
conductorgAnd
gTexas IC
FrankgWanlass 1963 CMOS
(FairchildgSemicon
ductor)
FedericogFaggin 1968 SiliconggategICgtechnology LatergJoinedgIntelgtogleadgfir
stgCPUgIntelg4004ging1970
2
(FairchildgSemicon 2300gTgong9mm
ductor)
ZarlinkgSemi Recently M2Agcapsuleg forgend takeg photographsgofg
conductors oscopy digestivegtractg 2/sec.
, Unitg-1 ICgTechnologies,gMOSg&gBigCMOSgCircuits
Moore’sgLaw:
• GordongE.gMooreg-gChairmangEmeritusgofgIntelgCorporation
• 1965g-gobservedgtrendsgingindustryg-gofgtransistorsgongICsgvsg releasegdates
• NoticedgnumbergofgtransistorsgdoublinggwithgreleasegofgeachgnewgICggeneration
• Releasegdatesg(separateggenerations)gweregallg18-24gmonthsgapart
“Thegnumbergofgtransistorsgongangintegratedgcircuitgwillgdoublegeveryg18gmonths”
Theg levelg ofg integrationg ofg silicong technologyg asg measuredg ing termsg ofg numberg ofg devicesg perg ICgSemi
conductorgindustryghasgfollowedgthisgpredictiongwithgsurprisinggaccuracy.
IC Technology:
g
• Speedg/gPowergperformancegofgavailablegtechnologies
• Thegmicroelectronicsgevolution
• SIAgRoadmap
• SemiconductorgManufacturersg2001gRanking
Circuit Technology
g
IC Technology
g
Bipolar CMOS BiCMOS SOI SiGe GaAs
Category BJT CMOS
Lower
PowergDi
PowergDissipatio Moderategt less
ssipation
n ogHigh
Speed Faster Fast Appr. High
Equalgrise packingg
Gm 4ms 0.4ms gandgfallgti Why density
me CMOS
Switchgimplement poor Good
ation ?
Techngology slower Faster Fully
restoredglo
Scaleg down
improvement moregeasily
gicglevels
