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Solution Manual Silicon VLSI Technology: Fundamentals, Practice and Modeling 1st Edition by James D. Plummer9780130850379

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Solution Manual Silicon VLSI Technology: Fundamentals, Practice and Modeling 1st Edition by James D. Plummer9780130850379

Institution
Fundamentals, Practice
Course
Fundamentals, Practice

Content preview

Microsoft Word -
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Solutions_Manual_
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Revised. Silicon
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VLSI Technology:
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Fundamentals,
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Practice and
Modeling 1st
Edition by James D.
Plummer
Luke
[COMPANY NAME] [Company address]

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ur
cn
oi
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, James D. Plummer
Michael D. Deal
Peter B. Griffin


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, Chapter 1 Problems
1.1. Plot the NRTS roadmap data from Table 1.1 (feature size vs. time) on an
expanded scale version of Fig. 1.2. Do all the points lie exactly on a straight
line? If not what reasons can you suggest for any deviations you observe?

Answer:

250

200

150
St

100
oi
50

0
cn
1997 2002 2007 2012
Year
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Interestingly, the actual data seems to consist of two slopes, with a steeper slope for
the first 2 years of the roadmap. Apparently the writers of the roadmap are more
confident of the industry's ability to make progress in the short term as opposed to
the long term.
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1.2. Assuming dopant atoms are uniformly distributed in a silicon crystal, how far
apart are these atoms when the doping concentration is a). 10 15 cm-3, b). 1018
cm-3, c). 5x1020 cm-3.

Answer:

The average distance between the dopant atoms would just be one over the cube
root of the dopant concentration:

x = NA −1/ 3

(
a) x = 1x1015 cm−3 )

= 1x10−5 cm = 0.1m = 100nm

b) x = (1x10 )
− 1/3
18 cm−3 = 1x10−6 cm = 0.01m = 10nm

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Fundamentals, Practice

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