R
TE
14
P
Semiconductor
CHA
Electronics
5. In a n-type semiconductor, which of the following statement
Energy Band in Solids and is true? (2013)
a. Holes are majority carriers and trivalent atoms are dopants
Basics of Semiconductor b. Electrons are majority carriers and trivalent atoms are
dopants
1. The solids which have the negative temperature coefficient c. Electron are minority carriers and pentavalent atoms are
dopants
of resistance are: [RC] (2020)
d. Holes are minority carriers and pentavalent atoms are
a. Insulators only
dopants
b. Semiconductors only
c. Insulators and semiconductors
d. Metals P-N Junction Diode (forward and
reverse bias), Diffusion and Drift
Intrinsic and Extrinsic Current
Semiconductor (P and N types)
6. P N P N
2. The electron concentration in an n-type semiconductor is
the same as hole concentration in a p-type semiconductor. a
An external field (electric) is applied across each of them. P N N P
Compare the currents in them. (2021)
a. current in p-type > current in n-type. b
N P N P
b. current in n-type > current in p-type.
c. No current will flow in p-type, current will only flow in c
n-type.
In the given circuits (a), (b) and (c), the potential drop across
d. current in n-type = current in p-type. the two p-n junctions are equal in: (2022)
3. An intrinsic semiconductor is converted into n-type extrinsic a. Both circuits (a) and (c) b. Circuit (a) only
semiconductor by doping it with (2020-Covid) c. Circuit (b) only d. Circuit (c) only
a. Aluminium b. Silver 7. Out of the following which one is a forward biased diode?
(2020-Covid)
c. Germanium d. Phosphorous
a.
4. For a p-type semiconductor, which of the following
statements is true? (2019) b.
a. Electrons are the majority carriers and trivalent atoms are c.
the dopants. d.
b. Holes are the majority carriers and trivalent atoms are the
8. The increase in the width of the depletion region in a p-n
dopants. junction diode is due to : (2020)
c. Holes are the majority carriers and pentavalent atoms are a. Reverse bias only
the dopants. b. Both forward bias and reverse bias
d. Electrons are the majority carriers and pentavalent atoms c. Increase in forward current
are the dopants. d. Forward bias only
, 2 Chapter & Topicwise NEET PYQ's PW
9. Which one of the following represents forward bias diode? 14. The barrier potential of a p-n junction depends on: (2014)
(2017-Delhi, 2006) a. Type of semiconductor material
a. b. Amount of doping
c. Temperature
b. Which one of the following is correct?
a. a and b only
c.
b. b only
d. c. b and c only
10. The given circuit has two ideal diodes connected as shown in d. a, b and c
the figure below. The current flowing through the resistance
R1 will be: (2016-II)
Diode as a Rectifier
15. In half wave rectification, if the input frequency is 60 Hz,
then the output frequency would be: (2022)
a. 120 Hz b. 0
c. 30 Hz d. 60 Hz
a. 1.43 A b. 3.13 A
c. 2.5 A d. 10.0 A
11. Consider the junction diode as ideal. The value of current Zener Diode
flowing through AB is: (2016-I)
16. Consider the following statements (A) and (B) and identify
the correct answer. (2021)
(A) A zener diode is Connected in reverse bias, when used
a. 0 A b. 10–2 A as a voltage regulator.
c. 10–1 A d. 10–3 A (B) The potential barrier of p-n junction lies between
12. If in a p-n junction, a square input signal of 10 V is applied, 0.1 V to 0.3 V.
as shown a. (A) and (B) both are incorrect.
b. (A) is correct and (B) is incorrect.
c. (A) is incorrect but (B) is correct.
d. (A) and (B) both are correct.
then the output across RL will be: (2015)
Optoelectronic Devices
a. b.
17. The given graph represents V-I characteristic for a
semiconductor device. (2014)
c. d.
Which of the following statement is correct?
a. It is V–I characteristic for solar cell where point A
Characteristics of P-N Junction represents open circuit voltage and point B short circuit
current
13. In a p-n junction diode, change in temperature due to heating
b. It is for a solar cell and points A and B represent open
(2018)
circuit voltage and current, respectively
a. Does not affect resistance of p-n junction
c. It is for a photo diode and points A and B represent open
b. Affects only forward resistance circuit voltage and current, respectively
c. Affects only reverse resistance d. It is for a LED and points A and B represents open circuit
d. Affects the overall V–I characteristics of p-n junction voltage and short circuit current respectively
TE
14
P
Semiconductor
CHA
Electronics
5. In a n-type semiconductor, which of the following statement
Energy Band in Solids and is true? (2013)
a. Holes are majority carriers and trivalent atoms are dopants
Basics of Semiconductor b. Electrons are majority carriers and trivalent atoms are
dopants
1. The solids which have the negative temperature coefficient c. Electron are minority carriers and pentavalent atoms are
dopants
of resistance are: [RC] (2020)
d. Holes are minority carriers and pentavalent atoms are
a. Insulators only
dopants
b. Semiconductors only
c. Insulators and semiconductors
d. Metals P-N Junction Diode (forward and
reverse bias), Diffusion and Drift
Intrinsic and Extrinsic Current
Semiconductor (P and N types)
6. P N P N
2. The electron concentration in an n-type semiconductor is
the same as hole concentration in a p-type semiconductor. a
An external field (electric) is applied across each of them. P N N P
Compare the currents in them. (2021)
a. current in p-type > current in n-type. b
N P N P
b. current in n-type > current in p-type.
c. No current will flow in p-type, current will only flow in c
n-type.
In the given circuits (a), (b) and (c), the potential drop across
d. current in n-type = current in p-type. the two p-n junctions are equal in: (2022)
3. An intrinsic semiconductor is converted into n-type extrinsic a. Both circuits (a) and (c) b. Circuit (a) only
semiconductor by doping it with (2020-Covid) c. Circuit (b) only d. Circuit (c) only
a. Aluminium b. Silver 7. Out of the following which one is a forward biased diode?
(2020-Covid)
c. Germanium d. Phosphorous
a.
4. For a p-type semiconductor, which of the following
statements is true? (2019) b.
a. Electrons are the majority carriers and trivalent atoms are c.
the dopants. d.
b. Holes are the majority carriers and trivalent atoms are the
8. The increase in the width of the depletion region in a p-n
dopants. junction diode is due to : (2020)
c. Holes are the majority carriers and pentavalent atoms are a. Reverse bias only
the dopants. b. Both forward bias and reverse bias
d. Electrons are the majority carriers and pentavalent atoms c. Increase in forward current
are the dopants. d. Forward bias only
, 2 Chapter & Topicwise NEET PYQ's PW
9. Which one of the following represents forward bias diode? 14. The barrier potential of a p-n junction depends on: (2014)
(2017-Delhi, 2006) a. Type of semiconductor material
a. b. Amount of doping
c. Temperature
b. Which one of the following is correct?
a. a and b only
c.
b. b only
d. c. b and c only
10. The given circuit has two ideal diodes connected as shown in d. a, b and c
the figure below. The current flowing through the resistance
R1 will be: (2016-II)
Diode as a Rectifier
15. In half wave rectification, if the input frequency is 60 Hz,
then the output frequency would be: (2022)
a. 120 Hz b. 0
c. 30 Hz d. 60 Hz
a. 1.43 A b. 3.13 A
c. 2.5 A d. 10.0 A
11. Consider the junction diode as ideal. The value of current Zener Diode
flowing through AB is: (2016-I)
16. Consider the following statements (A) and (B) and identify
the correct answer. (2021)
(A) A zener diode is Connected in reverse bias, when used
a. 0 A b. 10–2 A as a voltage regulator.
c. 10–1 A d. 10–3 A (B) The potential barrier of p-n junction lies between
12. If in a p-n junction, a square input signal of 10 V is applied, 0.1 V to 0.3 V.
as shown a. (A) and (B) both are incorrect.
b. (A) is correct and (B) is incorrect.
c. (A) is incorrect but (B) is correct.
d. (A) and (B) both are correct.
then the output across RL will be: (2015)
Optoelectronic Devices
a. b.
17. The given graph represents V-I characteristic for a
semiconductor device. (2014)
c. d.
Which of the following statement is correct?
a. It is V–I characteristic for solar cell where point A
Characteristics of P-N Junction represents open circuit voltage and point B short circuit
current
13. In a p-n junction diode, change in temperature due to heating
b. It is for a solar cell and points A and B represent open
(2018)
circuit voltage and current, respectively
a. Does not affect resistance of p-n junction
c. It is for a photo diode and points A and B represent open
b. Affects only forward resistance circuit voltage and current, respectively
c. Affects only reverse resistance d. It is for a LED and points A and B represents open circuit
d. Affects the overall V–I characteristics of p-n junction voltage and short circuit current respectively
