ELEC 3908 Winter 2022 LAB: 3 SIMULATION OF A MOSFET USING IC-CAP

ELEC 3908 Winter 2022
LAB: 3
SIMULATION OF A MOSFET USING IC-CAP
Submitted by: Emmanuel Abodunrin
101150151
Date lab performed: 1st December 2022
Section: A2
Group: 1




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https://www.coursehero.com/file/198943380/ELEC-3908-Lab-3-Reportpdf/

, INTRODUCTION
Thislab was the measurement and simulation of a silicon Mosfet using IC-CAP. The
ID vs VGS and ID vs VDS are measured and simulated to find the values of different variables.
THe IC-CAP spice simulator is used to develop the same graph and the values are extracted
for later analysis.They are used to mathematically predict the behaviour of the NMOS device
in the lab.


THEORY
To be more descriptive, a Mosfet is a semi-conductor transconductance device
constructeded by depositing a layer of insulating dielectric on the surface of adopted
semiconductor sample called the substrate. Forthe analysis of the device in todays lab we
used the following equations:
VT = VTO + λγ ( 𝑉𝑠𝑏 + 2Φ𝑓 - 2Φ𝑓 ; …. [1]
𝑉𝑡 − 𝑉𝑡𝑜
γ =
( 𝑉𝑠𝑏 +2Φ𝑓 − 2Φ𝑓 )
𝑏
VT = - 𝑚
ε𝑜𝑥
COX = 𝑡𝑜𝑥 ….. [1]
𝑚𝐿
μn = 𝐶𝑜𝑥 𝑉𝑑𝑠 𝑊



LAB




Figure 1: ID vs VDS with zero VSB




This study source was downloaded by 100000899606396 from CourseHero.com on 11-24-2025 06:02:31 GMT -06:00


https://www.coursehero.com/file/198943380/ELEC-3908-Lab-3-Reportpdf/