TEST BANK for Microelectronics Circuit
Analysis and Design, 5th Edition by Donald
A. Neamen and Phyllis R. Nelson
1. In an intrinsic semiconductor at room temperature (300K), the
concentration of electrons (n) is equal to:
a) The concentration of acceptor atoms
b) The concentration of holes (p)
c) The doping concentration (Nd)
d) Zero
**Answer: b**
2. Doping silicon with a Group V element (such as Phosphorus) results
in:
a) P-type semiconductor
b) N-type semiconductor
c) Intrinsic semiconductor
d) Insulator
**Answer: b**
3. The majority carriers in a P-type material are:
a) Electrons
, b) Holes
c) Ions
d) Neutrons
**Answer: b**
4. The process of adding impurities to an intrinsic semiconductor to
change its conductivity is called:
a) Doping
b) Diffusing
c) Annealing
d) Etching
**Answer: a**
5. The thermal voltage \( V_T \) at room temperature is approximately:
a) 25.9 mV
b) 0.7 V
c) 5 V
d) 1.1 V
**Answer: a**
6. Reverse saturation current in a diode is primarily caused by:
a) Majority carriers
b) Minority carriers
c) Tunneling
d) Avalanche breakdown
, **Answer: b**
7. The energy gap (Bandgap) of Silicon (Si) at 300K is approximately:
a) 0.66 eV
b) 1.12 eV
c) 1.42 eV
d) 3.2 eV
**Answer: b**
8. Electron mobility (\( \mu_n \)) in silicon is generally:
a) Equal to hole mobility
b) Less than hole mobility
c) Greater than hole mobility
d) Zero at room temperature
**Answer: c**
9. Conductivity in a semiconductor is given by:
a) \( \sigma = q(\mu_n n + \mu_p p) \)
b) \( \sigma = q(\mu_n n - \mu_p p) \)
c) \( \sigma = (\mu_n n + \mu_p p)/q \)
d) \( \sigma = kT/q \)
**Answer: a**
10. The law of mass action states that for a non-degenerate
semiconductor:
a) \( n = p \)
Analysis and Design, 5th Edition by Donald
A. Neamen and Phyllis R. Nelson
1. In an intrinsic semiconductor at room temperature (300K), the
concentration of electrons (n) is equal to:
a) The concentration of acceptor atoms
b) The concentration of holes (p)
c) The doping concentration (Nd)
d) Zero
**Answer: b**
2. Doping silicon with a Group V element (such as Phosphorus) results
in:
a) P-type semiconductor
b) N-type semiconductor
c) Intrinsic semiconductor
d) Insulator
**Answer: b**
3. The majority carriers in a P-type material are:
a) Electrons
, b) Holes
c) Ions
d) Neutrons
**Answer: b**
4. The process of adding impurities to an intrinsic semiconductor to
change its conductivity is called:
a) Doping
b) Diffusing
c) Annealing
d) Etching
**Answer: a**
5. The thermal voltage \( V_T \) at room temperature is approximately:
a) 25.9 mV
b) 0.7 V
c) 5 V
d) 1.1 V
**Answer: a**
6. Reverse saturation current in a diode is primarily caused by:
a) Majority carriers
b) Minority carriers
c) Tunneling
d) Avalanche breakdown
, **Answer: b**
7. The energy gap (Bandgap) of Silicon (Si) at 300K is approximately:
a) 0.66 eV
b) 1.12 eV
c) 1.42 eV
d) 3.2 eV
**Answer: b**
8. Electron mobility (\( \mu_n \)) in silicon is generally:
a) Equal to hole mobility
b) Less than hole mobility
c) Greater than hole mobility
d) Zero at room temperature
**Answer: c**
9. Conductivity in a semiconductor is given by:
a) \( \sigma = q(\mu_n n + \mu_p p) \)
b) \( \sigma = q(\mu_n n - \mu_p p) \)
c) \( \sigma = (\mu_n n + \mu_p p)/q \)
d) \( \sigma = kT/q \)
**Answer: a**
10. The law of mass action states that for a non-degenerate
semiconductor:
a) \( n = p \)
